Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
(Continued)
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
1.0
0.9
Notes :
1. V GS = 0 V
2. I D = 250 μ A
0.5
Notes :
1. V GS = 10 V
2. I D = 45 A
0.8
-100
-50
0
50
100
150
200
0.0
-100
-50
0
50
100
150
200
T J , Junction Temperature [ C]
T J , Junction Temperature [ C]
o
Figure 9. Maximum Safe Operating Area
o
Figure 10. Maximum Drain Current
vs. Case Temperature
100
10
3
Operation in This Area
is Limited by R DS(on)
80
10
2
DC
10 ms
1 ms
100 μ s
10 μ s
60
10
1
40
10
1. T C = 25 C
2. T J = 175 C
0
Notes :
o
o
3. Single Pulse
20
10
10
10
10
-1
0
1
2
0
25
50
75
100
125
150
175
T C , Case Temperature [ C]
V DS , Drain-Source Voltage [V]
o
Figure 11. Transient Thermal Response Curve
D = 0 .5
10
-1
0 .2
N o te s :
1 . Z ? JC ( t) = 0 .4
o
C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
0 .1
3 . T JM - T C = P D M * Z ?
JC
(t)
0 .0 5
0 .0 2
P DM
10
-2
0 .0 1
s in g lee p u s e
t 1
t 2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
?2006 Fairchild Semiconductor Corporation
FQA90N15 Rev C1
4
www.fairchildsemi.com
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